document number: 85807 for technical questions, contact: esdprotection@vishay.com www.vishay.com rev. 2.0, 22-jul-10 1 single-line esd-protection in sot-23 gsot03 to gsot36 vishay semiconductors marking (example only) yyy = type code (see table below) xx = date code features ? single-line esd-protection device ? esd-protection acc. iec 61000-4-2 30 kv contact discharge 30 kv air discharge ? space saving sot-23 package ? aec-q101 qualified ?e3 - sn ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec 20421 1 2 3 20512 1 20357 yyy xx xx ordering information device name environmental status ordering code taped units per reel (8 mm tape on 7" reel) minimum order quantity gsot03 standard gsot03-gs08 3000 15 000 green gsot03-v-g-08 gsot04 standard gsot04-gs08 3000 15 000 green gsot04-v-g-08 gsot05 standard gsot05-gs08 3000 15 000 green gsot05-v-g-08 gsot08 standard gsot08-gs08 3000 15 000 green gsot08-v-g-08 gsot12 standard GSOT12-GS08 3000 15 000 green gsot12-v-g-08 gsot15 standard gsot15-gs08 3000 15 000 green gsot15-v-g-08 gsot24 standard gsot24-gs08 3000 15 000 green gsot24-v-g-08 gsot36 standard gsot36-gs08 3000 15 000 green gsot36-v-g-08 ** please see document vishay material category policy: www.vishay.com/doc?99902
www.vishay.com for technical questions, contact: esdprotection@vishay.com document number: 85807 2 rev. 2.0, 22-jul-10 gsot03 to gsot36 vishay semiconductors single-line esd-protection in sot-23 package data device name package name type code environmental status weight molding compound flammability rating moisture sensitivity level soldering conditions gsot03 sot-23 03 standard 8.8 mg ul 94 v-0 msl level 1 (according j-std-020) 260 c/10 s at terminals 03g green 8.1 mg gsot04 sot-23 04 standard 8.8 mg ul 94 v-0 msl level 1 (according j-std-020) 260 c/10 s at terminals 04g green 8.1 mg gsot05 sot-23 05 standard 8.8 mg ul 94 v-0 msl level 1 (according j-std-020) 260 c/10 s at terminals 05g green 8.1 mg gsot08 sot-23 08 standard 8.8 mg ul 94 v-0 msl level 1 (according j-std-020) 260 c/10 s at terminals 08g green 8.1 mg gsot12 sot-23 12 standard 8.8 mg ul 94 v-0 msl level 1 (according j-std-020) 260 c/10 s at terminals 12g green 8.1 mg gsot15 sot-23 15 standard 8.8 mg ul 94 v-0 msl level 1 (according j-std-020) 260 c/10 s at terminals 15g green 8.1 mg gsot24 sot-23 24 standard 8.8 mg ul 94 v-0 msl level 1 (according j-std-020) 260 c/10 s at terminals 24g green 8.1 mg gsot36 sot-23 36 standard 8.8 mg ul 94 v-0 msl level 1 (according j-std-020) 260 c/10 s at terminals 36g green 8.1 mg absolute maximum ratings gsot03 parameter test conditions symbol value unit peak pulse current pin 3 to 1 acc. iec 61000-4-5, t p = 8/20 s; single shot i ppm 30 a peak pulse power pin 3 to 1 acc. iec 61000-4-5, t p = 8/20 s; single shot p pp 369 w esd immunity contact discharge acc. iec 61000-4-2; 10 pulses v esd 30 kv air discharge acc. iec 61000-4-2; 10 pulses 30 kv operating temperature junction temperature t j - 40 to + 125 c storage temperature t stg - 55 to + 150 c absolute maximum ratings gsot04 parameter test conditions symbol value unit peak pulse current pin 3 to 1 acc. iec 61000-4-5, t p = 8/20 s; single shot i ppm 30 a peak pulse power pin 3 to 1 acc. iec 61000-4-5, t p = 8/20 s; single shot p pp 429 w esd immunity contact discharge acc. iec 61000-4-2; 10 pulses v esd 30 kv air discharge acc. iec 61000-4-2; 10 pulses 30 kv operating temperature junction temperature t j - 40 to + 125 c storage temperature t stg - 55 to + 150 c
document number: 85807 for technical questions, contact: esdprotection@vishay.com www.vishay.com rev. 2.0, 22-jul-10 3 gsot03 to gsot36 single-line esd-protection in sot-23 vishay semiconductors absolute maximum ratings gsot05 parameter test conditions symbol value unit peak pulse current pin 3 to 1 acc. iec 61000-4-5, t p = 8/20 s; single shot i ppm 30 a peak pulse power pin 3 to 1 acc. iec 61000-4-5, t p = 8/20 s; single shot p pp 480 w esd immunity contact discharge acc. iec 61000-4-2; 10 pulses v esd 30 kv air discharge acc. iec 61000-4-2; 10 pulses 30 kv operating temperature junction temperature t j - 40 to + 125 c storage temperature t stg - 55 to + 150 c absolute maximum ratings gsot08 parameter test conditions symbol value unit peak pulse current pin 3 to 1 acc. iec 61000-4-5, t p = 8/20 s; single shot i ppm 18 a peak pulse power pin 3 to 1 acc. iec 61000-4-5, t p = 8/20 s; single shot p pp 345 w esd immunity contact discharge acc. iec 61000-4-2; 10 pulses v esd 30 kv air discharge acc. iec 61000-4-2; 10 pulses 30 kv operating temperature junction temperature t j - 40 to + 125 c storage temperature t stg - 55 to + 150 c absolute maximum ratings gsot12 parameter test conditions symbol value unit peak pulse current pin 3 to 1 acc. iec 61000-4-5, t p = 8/20 s; single shot i ppm 12 a peak pulse power pin 3 to 1 acc. iec 61000-4-5, t p = 8/20 s; single shot p pp 312 w esd immunity contact discharge acc. iec 61000-4-2; 10 pulses v esd 30 kv air discharge acc. iec 61000-4-2; 10 pulses 30 kv operating temperature junction temperature t j - 40 to + 125 c storage temperature t stg - 55 to + 150 c absolute maximum ratings gsot15 parameter test conditions symbol value unit peak pulse current pin 3 to 1 acc. iec 61000-4-5, t p = 8/20 s; single shot i ppm 8a peak pulse power pin 3 to 1 acc. iec 61000-4-5, t p = 8/20 s; single shot p pp 230 w esd immunity contact discharge acc. iec 61000-4-2; 10 pulses v esd 30 kv air discharge acc. iec 61000-4-2; 10 pulses 30 kv operating temperature junction temperature t j - 40 to + 125 c storage temperature t stg - 55 to + 150 c absolute maximum ratings gsot24 parameter test conditions symbol value unit peak pulse current pin 3 to 1 acc. iec 61000-4-5, t p = 8/20 s; single shot i ppm 5a peak pulse power pin 3 to 1 acc. iec 61000-4-5, t p = 8/20 s; single shot p pp 235 w esd immunity contact discharge acc. iec 61000-4-2; 10 pulses v esd 30 kv air discharge acc. iec 61000-4-2; 10 pulses 30 kv operating temperature junction temperature t j - 40 to + 125 c storage temperature t stg - 55 to + 150 c
www.vishay.com for technical questions, contact: esdprotection@vishay.com document number: 85807 4 rev. 2.0, 22-jul-10 gsot03 to gsot36 vishay semiconductors single-line esd-protection in sot-23 bias-mode (1-line bidirectional asymme trical protection mode) with the gsotxx one signal- or data-lines (l1) can be prote cted against voltage transients. with pin 1 connected to ground and pin 3 connected to a signal- or data-line which has to be protected. as long as the voltage level on the data- or signal-li ne is between 0 v (ground level) and the spec ified maximum reverse working voltage (v rwm ) the protection diode between pin 1 and pin 3 offer a high isolation to the ground line. the protection device behaves like an open switch. as soon as any positive transient voltage signal exceeds the break through voltage level of th e protection diode, the diode becomes conductive and shorts the transien t current to ground. now the protection de vice behaves like a closed switch. the clamping voltage (v c ) is defined by the br eakthrough voltage (v br ) level plus the voltage drop at the series impedance (resistance and inductance) of the protection device. any negative transient signal w ill be clamped accordingly. the negative transien t current is flowing in the forward direction o f the protection diode. the low forward voltage (v f ) clamps the negative transient close to the ground level. due to the different clamping levels in forward and reverse direction the gsotxx clamping behaviour is bidirectional and asymmetrical (bias). note ? bias mode (between pin 3 and pin 1) absolute maximum ratings gsot36 parameter test conditions symbol value unit peak pulse current pin 3 to 1 acc. iec 61000-4-5, t p = 8/20 s; single shot i ppm 3.5 a peak pulse power pin 3 to 1 acc. iec 61000-4-5, t p = 8/20 s; single shot p pp 248 w esd immunity contact discharge acc. iec 61000-4-2; 10 pulses v esd 30 kv air discharge acc. iec 61000-4-2; 10 pulses 30 kv operating temperature junction temperature t j - 40 to + 125 c storage temperature t stg - 55 to + 150 c 20422 l1 1 2 3 ground bias electrical characteristics gsot03 parameter test conditions/remarks symbol min. typ. max. unit protection paths number of li nes which can be protected n channel --1lines reverse working voltage at i r = 100 a v rwm 3.3 - - v reverse current at v r = 3.3 v i r --100a reverse breakdown voltage at i r = 1 ma v br 44.6- v reverse clamping voltage at i pp = 1 a v c -5.77.5v at i pp = i ppm = 30 a - 10 12.3 v forward clamping voltage at i pp = 1 a v f -11.2v at i pp = i ppm = 30 a - 4.5 - v capacitance at v r = 0 v; f = 1 mhz c d - 420 600 pf at v r = 1.6 v; f = 1 mhz - 260 - pf
document number: 85807 for technical questions, contact: esdprotection@vishay.com www.vishay.com rev. 2.0, 22-jul-10 5 gsot03 to gsot36 single-line esd-protection in sot-23 vishay semiconductors note ? bias mode (between pin 3 and pin 1) note ? bias mode (between pin 3 and pin 1) note ? bias mode (between pin 3 and pin 1) electrical characteristics gsot04 parameter test conditions/re marks symbol min. typ. max. unit protection paths number of li nes which can be protected n channel --1lines reverse working voltage at i r = 20 a v rwm 4--v reverse current at v r = 4 v i r - - 20 a reverse breakdown voltage at i r = 1 ma v br 56.1- v reverse clamping voltage at i pp = 1 a v c -7.59 v at i pp = i ppm = 30 a - 11.2 14.3 v forward clamping voltage at i pp = 1 a v f -11.2v at i pp = i ppm = 30 a - 4.5 - v capacitance at v r = 0 v; f = 1 mhz c d - 310 450 pf at v r = 2 v; f = 1 mhz - 200 - pf electrical characteristics gsot05 parameter test conditions/re marks symbol min. typ. max. unit protection paths number of li nes which can be protected n channel --1lines reverse working voltage at i r = 10 a v rwm 5--v reverse current at v r = 5 v i r - - 10 a reverse breakdown voltage at i r = 1 ma v br 66.8- v reverse clamping voltage at i pp = 1 a v c -78.7v at i pp = i ppm = 30 a - 12 16 v forward clamping voltage at i pp = 1 a v f -11.2v at i pp = i ppm = 30 a - 4.5 - v capacitance at v r = 0 v; f = 1 mhz c d - 260 350 pf at v r = 2.5 v; f = 1 mhz - 150 - pf electrical characteristics gsot08 parameter test conditions/re marks symbol min. typ. max. unit protection paths number of li nes which can be protected n channel --1lines reverse working voltage at i r = 5 a v rwm 8--v reverse current at v r = 8 v i r --5a reverse breakdown voltage at i r = 1 ma v br 910- v reverse clamping voltage at i pp = 1 a v c - 10.7 13 v at i pp = i ppm = 18 a - 15.2 19.2 v forward clamping voltage at i pp = 1 a v f -11.2v at i pp = i ppm = 18 a - 3 - v capacitance at v r = 0 v; f = 1 mhz c d - 160 250 pf at v r = 4 v; f = 1 mhz - 80 - pf
www.vishay.com for technical questions, contact: esdprotection@vishay.com document number: 85807 6 rev. 2.0, 22-jul-10 gsot03 to gsot36 vishay semiconductors single-line esd-protection in sot-23 note ? bias mode (between pin 3 and pin 1) note ? bias mode (between pin 3 and pin 1) note ? bias mode (between pin 3 and pin 1) electrical characteristics gsot12 parameter test conditions/remarks symbol min. typ. max. unit protection paths number of li nes which can be protected n channel --1lines reverse working voltage at i r = 1 a v rwm 12 - - v reverse current at v r = 12 v i r --1a reverse breakdown voltage at i r = 1 ma v br 13.5 15 - v reverse clamping voltage at i pp = 1 a v c - 15.4 18.7 v at i pp = i ppm = 12 a - 21.2 26 v forward clamping voltage at i pp = 1 a v f -11.2v at i pp = i ppm = 12 a - 2.2 - v capacitance at v r = 0 v; f = 1 mhz c d - 115 150 pf at v r = 6 v; f = 1 mhz - 50 - pf electrical characteristics gsot15 parameter test conditions/remarks symbol min. typ. max. unit protection paths number of li nes which can be protected n channel --1lines reverse working voltage at i r = 1 a v rwm 15 - - v reverse current at v r = 15 v i r --1a reverse breakdown voltage at i r = 1 ma v br 16.5 18 - v reverse clamping voltage at i pp = 1 a v c - 19.4 23.5 v at i pp = i ppm = 8 a - 24.8 28.8 v forward clamping voltage at i pp = 1 a v f -11.2v at i pp = i ppm = 8 a - 1.8 - v capacitance at v r = 0 v; f = 1 mhz c d -90120pf at v r = 7.5 v; f = 1 mhz - 35 - pf electrical characteristics gsot24 parameter test conditions/remarks symbol min. typ. max. unit protection paths number of li nes which can be protected n channel --1lines reverse working voltage at i r = 1 a v rwm 24 - - v reverse current at v r = 24 v i r --1a reverse breakdown voltage at i r = 1 ma v br 27 30 - v reverse clamping voltage at i pp = 1 a v c -3441v at i pp = i ppm = 5 a - 41 47 v forward clamping voltage at i pp = 1 a v f -11.2v at i pp = i ppm = 5 a - 1.4 - v capacitance at v r = 0 v; f = 1 mhz c d -6580pf at v r = 12 v; f = 1 mhz - 20 - pf
document number: 85807 for technical questions, contact: esdprotection@vishay.com www.vishay.com rev. 2.0, 22-jul-10 7 gsot03 to gsot36 single-line esd-protection in sot-23 vishay semiconductors note ? bias mode (between pin 3 and pin 1) package dimensions in millimeters (inches): sot-23 electrical characteristics gsot36 parameter test conditions/re marks symbol min. typ. max. unit protection paths number of li nes which can be protected n channel --1lines reverse working voltage at i r = 1 a v rwm 36 - - v reverse current at v r = 36 v i r --1a reverse breakdown voltage at i r = 1 ma v br 39 43 - v reverse clamping voltage at i pp = 1 a v c -4960v at i pp = i ppm = 3.5 a - 59 71 v forward clamping voltage at i pp = 1 a v f -11.2v at i pp = i ppm = 3.5 a - 1.3 - v capacitance at v r = 0 v; f = 1 mhz c d -5265pf at v r = 18 v; f = 1 mhz - 12 - pf foot print recommendation: rev. 8 - date: 23. s ept.2009 17418 document no.: 6.541-5014.01-4 0.9 (0.035) 1 (0.039) 0.9 (0.035) 1 (0.039) 1.43 (0.056) 0.45 (0.018) 0.35 (0.014) 2.8 (0.110) 3.1 (0.122) 0.45 (0.018) 0.35 (0.014) 0.45 (0.018) 0.35 (0.014) 0.1 (0.004) max. 2.35 (0.093) 2.6 (0.102) 0.175 (0.007) 0.098 (0.004) 1.15 (0.045) 0.9 (0.035) 1.20 (0.047) 0.95 (0.037) 0.95 (0.037) 2 (0.079) 0.7 (0.028) 0.9 (0.035) 0 to 8 0.2 (0.008) 0.3 (0.012) 0.5 (0.020) 0.550 ref. (0.022 ref.)
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